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Transport in semiconductor mesoscopic devices
Title statement Transport in semiconductor mesoscopic devices / David K. Ferry. [elektronický zdroj] Publication Bristol [England] (Temple Circus, Temple Way, Bristol BS1 6HG, UK) : IOP Publishing, [2015] Phys.des. 1 online resource (various pagings) : illustrations (some color). ISBN 9780750311038 (online) 9780750311274 mobi Edition [IOP release 2] IOP expanding physics, ISSN 2053-2563 Note "Version: 20150801"--Title page verso. Internal Bibliographies/Indexes Note Includes bibliographical references. Contents Preface -- Author biography -- 1. The world of nanoelectronics -- 1.1. Moore's law -- 1.2. Nanostructures -- 1.3. On the concept of localization -- 1.4. Some electronic time and length scales -- 1.5. Heterostructures for mesoscopic devices -- 1.6. Nanofabrication Content note 2. Wires and channels -- 2.1. The quantum point contact -- 2.2. The density of states -- 2.3. The Landauer formula -- 2.4. Temperature, scattering, and anomalies -- 2.5. Beyond the simple theory for the QPC -- 2.6. Landauer's contact resistance and scaled CMOS -- 2.7. Simulating the channel: the scattering matrix -- 2.8. Simulating the channel: the recursive Green's function -- Appendix A. Coupled quantum and Poisson problems -- Appendix B. The harmonic oscillator -- Appendix C. Discretizing the Schrödinger equation. 3. The Aharonov-Bohm effect -- 3.1. Simple gauge theory of the AB effect -- 3.2. Temperature dependence of the AB effect -- 3.3. The AB effect in other structures -- 3.4. Gated AB rings -- 3.5. The electrostatic AB effect -- 3.6. The AAS effect -- 3.7. Weak localization -- Appendix D. The gauge in field theory. 4. Carbon and other new materials -- 4.1. Graphene -- 4.2. Carbon nanotubes -- 4.3. Topological insulators -- 4.4. The chalcogenides -- Appendix E. Klein tunneling. 5. Localization and fluctuations -- 5.1. Localization of electronic states -- 5.2. Conductivity -- 5.3. Conductance fluctuations -- 5.4. Phase-breaking time. 6. The quantum Hall effect -- 6.1. The Shubnikov-de Haas effect -- 6.2. The quantum Hall effect -- 6.3. The Büttiker-Landauer approach -- 6.4. The fractional quantum Hall effect. 7. Spin -- 7.1. The spin Hall effect -- 7.2. Spin injection -- 7.3. Spin currents in nanowires -- 7.4. Spin relaxation -- Appendix F. Spin angular momentum -- Appendix G. The Bloch sphere. 8. Tunnel devices -- 8.1. Coulomb blockade -- 8.2. Single-electron structures -- 8.3. Quantum dots and qubits -- 8.4. Resonant tunneling diodes -- Appendix H. Simple tunneling -- Appendix I. The Darwin-Fock spectrum. 9. Open quantum dots -- 9.1. Conductance fluctuations in open dots -- 9.2. Pointer states -- 9.3. Hybrid states -- 9.4. Imaging the pointer state scar. 10. Hot carriers in mesoscopic devices -- 10.1. Energy-loss rates -- 10.2. The energy-relaxation time. Notes to Availability Přístup pouze pro oprávněné uživatele Audience Graduate students and researchers in semiconductor physics and devices. Note Způsob přístupu: World Wide Web.. Požadavky na systém: Adobe Acrobat Reader. Another responsib. Institute of Physics (Great Britain), Subj. Headings Electron transport. * Semiconductors. * Nanostructured materials - Electric properties. * Nanostructures - Electric properties. * Mesoscopic phenomena (Physics) * Electronic devices & materials. * TECHNOLOGY & ENGINEERING / Electronics / Semiconductors. Form, Genre elektronické knihy electronic books Country Anglie Language angličtina Document kind Electronic books URL Plný text pro studenty a zaměstnance UPOL 
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Modern electronics is being transformed as device size decreases to a size where the dimensions are significantly smaller than the constituent electron's mean free path. In such systems the electron motion is strongly confined resulting in dramatic changes of behaviour compared to the bulk. This book introduces the physics and applications of transport in such mesoscopic and nanoscale electronic systems and devices. The behaviour of these novel devices is influenced by numerous effects not seen in bulk semiconductors, such as the Aharonov-Bohm Effect, disorder and localization, energy quantization, electron wave interference, spin splitting, tunnelling and the quantum hall effect to name a few. Including coverage of recent developments, and with a chapter on carbon-based nanoelectronics, this book will provide a good course text for advanced students or as a handy reference for researchers or those entering this interdisciplinary area.
Preface -- Author biography -- 1. The world of nanoelectronics -- 1.1. Moore's law -- 1.2. Nanostructures -- 1.3. On the concept of localization -- 1.4. Some electronic time and length scales -- 1.5. Heterostructures for mesoscopic devices -- 1.6. Nanofabrication2. Wires and channels -- 2.1. The quantum point contact -- 2.2. The density of states -- 2.3. The Landauer formula -- 2.4. Temperature, scattering, and anomalies -- 2.5. Beyond the simple theory for the QPC -- 2.6. Landauer's contact resistance and scaled CMOS -- 2.7. Simulating the channel: the scattering matrix -- 2.8. Simulating the channel: the recursive Green's function -- Appendix A. Coupled quantum and Poisson problems -- Appendix B. The harmonic oscillator -- Appendix C. Discretizing the Schrödinger equation3. The Aharonov-Bohm effect -- 3.1. Simple gauge theory of the AB effect -- 3.2. Temperature dependence of the AB effect -- 3.3. The AB effect in other structures -- 3.4. Gated AB rings -- 3.5. The electrostatic AB effect -- 3.6. The AAS effect -- 3.7. Weak localization -- Appendix D. The gauge in field theory4. Carbon and other new materials -- 4.1. Graphene -- 4.2. Carbon nanotubes -- 4.3. Topological insulators -- 4.4. The chalcogenides -- Appendix E. Klein tunneling5. Localization and fluctuations -- 5.1. Localization of electronic states -- 5.2. Conductivity -- 5.3. Conductance fluctuations -- 5.4. Phase-breaking time6. The quantum Hall effect -- 6.1. The Shubnikov-de Haas effect -- 6.2. The quantum Hall effect -- 6.3. The Büttiker-Landauer approach -- 6.4. The fractional quantum Hall effect7. Spin -- 7.1. The spin Hall effect -- 7.2. Spin injection -- 7.3. Spin currents in nanowires -- 7.4. Spin relaxation -- Appendix F. Spin angular momentum -- Appendix G. The Bloch sphere8. Tunnel devices -- 8.1. Coulomb blockade -- 8.2. Single-electron structures -- 8.3. Quantum dots and qubits -- 8.4. Resonant tunneling diodes -- Appendix H. Simple tunneling -- Appendix I. The Darwin-Fock spectrum9. Open quantum dots -- 9.1. Conductance fluctuations in open dots -- 9.2. Pointer states -- 9.3. Hybrid states -- 9.4. Imaging the pointer state scar10. Hot carriers in mesoscopic devices -- 10.1. Energy-loss rates -- 10.2. The energy-relaxation time.
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