Number of the records: 1

lasery polovodičové

Topical term	lasery polovodičové
See link	Diode Lasers (UF)
	diodové lasery (UF)
	GaAlAs Lasers (UF)
	GaAs Lasers (UF)
	galium-aluminium-arsenidové lasery (UF)
	galium-arsenidové lasery (UF)
	Gallium Aluminum Arsenide Lasers (UF)
	Gallium Arsenide Lasers (UF)
	Lasers, GaAlAs (UF)
	Lasers, GaAs (UF)
	Lasers, Gallium Aluminum Arsenide (UF)
	Lasers, Gallium Arsenide (UF)
	Lasers, Quantum Cascade (UF)
	lasery s kvantovou kaskádou (UF)
	Quantum Cascade Lasers (UF)
	Semiconductor Diode Lasers (UF)
See also	lasery
Linking entry	Lasers, Semiconductor
Conspect	E07. - 632. - 490. - 480
	E07. - 710. - 520. - 480
Note	Lasers with a semiconductor diode as the active medium. Diode lasers transform electric energy to light using the same principle as a light-emitting diode (LED), but with internal reflection capability, thus forming a resonator where a stimulated light can reflect back and forth, allowing only a certain wavelength to be emitted. The emission of a given device is determined by the active compound used (e.g., gallium arsenide crystals doped with aluminum or indium). Typical wavelengths are 810, 1,060 and 1,300 nm. (From UMDNS, 2005)
Database	MESH
References	(1) - MESH

subject heading

Number of the records: 1