Preface -- 1. Introduction and overview -- 1.1. Reasons for moving away from normal practices in electronics -- 1.2. Organization of the book -- 1.3. Temperature effects -- 1.4. Harsh environment effects -- 1.5. Discussion and conclusions2. Operating electronics beyond conventional limits -- 2.1. Life-threatening temperature imbalances on Earth and other planets -- 2.2. Temperature disproportions for electronics -- 2.3. High-temperature electronics -- 2.4. Low-temperature electronics -- 2.5. The scope of extreme-temperature and harsh-environment electronics -- 2.6. Discussion and conclusionspart I. Extreme-temperature electronics -- 3. Temperature effects on semiconductors -- 3.1. Introduction -- 3.2. The energy bandgap -- 3.3. Intrinsic carrier concentration -- 3.4. Carrier saturation velocity -- 3.5. Electrical conductivity of semiconductors -- 3.6. Free carrier concentration in semiconductors -- 3.7. Incomplete ionization and carrier freeze-out -- 3.8. Different ionization regimes -- 3.9. Mobilities of charge carriers in semiconductors -- 3.10. Equations for mobility variation with temperature -- 3.11. Mobility in MOSFET inversion layers at low temperatures -- 3.12. Carrier lifetime -- 3.13. Wider bandgap semiconductors than silicon -- 3.14. Discussion and conclusions4. Temperature dependence of the electrical characteristics of silicon bipolar devices and circuits -- 4.1. Properties of silicon -- 4.2. Intrinsic temperature of silicon -- 4.3. Recapitulating single-crystal silicon wafer technology -- 4.4. Examining temperature effects on bipolar devices -- 4.5. Bipolar analog circuits in the 25?C to 300?C range -- 4.6. Bipolar digital circuits in the 25?C to 340?C range -- 4.7. Discussion and conclusions5. Temperature dependence of electrical characteristics of silicon MOS devices and circuits -- 5.1. Introduction -- 5.2. Threshold voltage of an n-channel enhancement mode MOSFET -- 5.3. On-resistance (RDS(ON)) of a double-diffused vertical MOSFET -- 5.4. Transconductance (gm) of a MOSFET -- 5.5. BVDSS and IDSS of a MOSFET -- 5.6. Zero temperature coefficient biasing point of MOSFET -- 5.7. Dynamic response of a MOSFET -- 5.8. MOS analog circuits in the 25?C to 300?C range -- 5.9. Digital CMOS circuits in -196?C to 270?C range -- 5.10. Discussion and conclusions6. The influence of temperature on the performance of silicon-germanium heterojunction bipolar transistors -- 6.1. Introduction -- 6.2. HBT fabrication -- 6.3. Current gain and forward transit time of Si/Si1-xGex HBT -- 6.4. Comparison between Si BJT and Si/SiGe HBT -- 6.5. Discussion and conclusions7. The temperature-sustaining capability of gallium arsenide electronics -- 7.1. Introduction -- 7.2. The intrinsic temperature of GaAs -- 7.3. Growth of single-crystal gallium arsenide -- 7.4. Doping of GaAs -- 7.5. Ohmic contacts to GaAs -- 7.6. Schottky contacts to GaAs -- 7.7. Commercial GaAs device evaluation in the 25?C to 400?C temperature range -- 7.8. Structural innovations for restricting the leakage current of GaAs MESFET up to 300?C -- 7.9. Won et al threshold voltage model for a GaAs MESFET -- 7.10. The high-temperature electronic technique for enhancing the performance of MESFETs up to 300?C -- 7.11. The operation of GaAs complementary heterojunction FETs from 25?C to 500?C -- 7.12. GaAs bipolar transistor operation up to 400?C -- 7.13. A GaAs-based HBT for applications up to 350?C -- 7.14. AlxGaAs1-x/GaAs HBT -- 7.15. Discussion and conclusions8. Silicon carbide electronics for hot environments -- 8.1. Introduction -- 8.2. Intrinsic temperature of silicon carbide -- 8.3. Silicon carbide single-crystal growth -- 8.4. Doping of silicon carbide -- 8.5. Surface oxidation of silicon dioxide -- 8.6. Schottky and ohmic contacts to silicon carbide -- 8.7. SiC p-n diodes -- 8.8. SiC Schottky-barrier diodes -- 8.9. SiC JFETs -- 8.10. SiC bipolar junction transistors -- 8.11. SiC MOSFETs -- 8.12. Discussion and conclusions9. Gallium nitride electronics for very hot environments -- 9.1. Introduction -- 9.2. Intrinsic temperature of gallium nitride -- 9.3. Growth of the GaN epitaxial layer -- 9.4. Doping of GaN -- 9.5. Ohmic contacts to GaN -- 9.6. Schottky contacts to GaN -- 9.7. GaN MESFET model with hyperbolic tangent function -- 9.8. AlGaN/GaN HEMTs -- 9.9. InAlN/GaN HEMTs -- 9.10. Discussion and conclusions10. Diamond electronics for ultra-hot environments -- 10.1. Introduction -- 10.2. Intrinsic temperature of diamond -- 10.3. Synthesis of diamond -- 10.4. Doping of diamond -- 10.5. A diamond p-n junction diode -- 10.6. Diamond Schottky diode -- 10.7. Diamond BJT operating at <200?C -- 10.8. Diamond MESFET -- 10.9. Diamond JFET -- 10.10. Diamond MISFET -- 10.11. Discussion and conclusions11. High-temperature passive components, interconnections and packaging -- 11.1. Introduction -- 11.2. High-temperature resistors -- 11.3. High-temperature capacitors -- 11.4. High-temperature magnetic cores and inductors -- 11.5. High-temperature metallization -- 11.6. High-temperature packaging -- 11.7. Discussion and conclusions12. Superconductive electronics for ultra-cool environment -- 12.1. Introduction -- 12.2. Superconductivity basics -- 12.3. Josephson junction -- 12.4. Inverse AC Josephson effect : Shapiro steps -- 12.5. Superconducting quantum interference devices -- 12.6. Rapid single flux quantum logic -- 12.7. Discussion and conclusions13. Superconductor-based microwave circuits operating at liquid-nitrogen temperatures -- 13.1. Introduction -- 13.2. Substrates for microwave circuits -- 13.3. HTS thin-film materials -- 13.4. Fabrication processes for HTS microwave circuits -- 13.5. Design and tuning approaches for HTS filters -- 13.6. Cryogenic packaging -- 13.7. HTS bandpass filters for mobile telecommunications -- 13.8. HTS JJ-based frequency down-converter -- 13.9. Discussion and conclusions14. High-temperature superconductor-based power delivery -- 14.1. Introduction -- 14.2. Conventional electrical power transmission -- 14.3. HTS wires -- 14.4. HTS cable designs -- 14.5. HTS fault current limiters -- 14.6. HTS transformers -- 14.7. Discussion and conclusionspart II. Harsh-environment electronics -- 15. Humidity and contamination effects on electronics -- 15.1. Introduction -- 15.2. Absolute and relative humidity -- 15.3. Relation between humidity, contamination and corrosion -- 15.4. Metals and alloys used in electronics -- 15.5. Humidity-triggered corrosion mechanisms -- 15.6. Discussion and conclusions16. Moisture and waterproof electronics -- 16.1. Introduction -- 16.2. Corrosion prevention by design -- 16.3. Parylene coatings -- 16.4. Superhydrophobic coatings -- 16.5. Volatile corrosion inhibitor coatings -- 16.6. Silicones -- 16.7. Discussion and conclusions17. Preventing chemical corrosion in electronics -- 17.1. Introduction -- 17.2. Sulfidic and oxidation corrosion from environmental gases -- 17.3. Electrolytic ion migration and galvanic coupling -- 17.4. Internal corrosion of integrated and printed circuit board circuits -- 17.5. Fretting corrosion -- 17.6. Tin whisker growth -- 17.7. Minimizing corrosion risks -- 17.8. Further protection methods -- 17.9. Hermetic packaging -- 17.10. Hermetic glass passivation of discrete high-voltage diodes, transistors and thyristors -- 17.11. Discussion and conclusions18. Radiation effects on electronics -- 18.1. Introduction -- 18.2. Sources of radiation -- 18.3. Types of radiation effects -- 18.4. Total dose effects -- 18.5. Single event effects -- 18.6. Discussion and conclusions19. Radiation-hardened electronics -- 19.1. The meaning of 'radiation hardening' -- 19.2. Radiation hardening by process (RHBP) -- 19.3. Radiation hardening by design -- 19.4. Discussion and Conclusions20. Vibration-tolerant electronics -- 20.1. Vibration is omnipresent -- 20.2. Random and sinusoidal vibrations -- 20.3. Countering vibration effects -- 20.4. Passive and active vibration isolators -- 20.5. Theory of passive vibration isolation -- 20.6. Mechanical spring vibration isolators -- 20.7. Air-spring vibration isolators -- 20.8. Wire-rope isolators -- 20.9. Elastomeric isolators -- 20.10. Negative stiffness isolators -- 20.11. Active vibration isolators -- 20.12. Discussion and conclusions.